??? 07/22/11 07:25 Read: times |
#182974 - P89LV51RD2FN IAP write endurance Responding to: ???'s previous message |
The 93C46 Serial EEPROM has write endurance of 1,000,000 times.
The P89LV51RD2 Flash memory has a typical of 10,000 write times. If the application usualy reads from the 93C46 and just do occasionally writes then the flash of the mcu may be adequate and this is an elegant solution. But if the application does a lot of writes to the data stored on 93C46 during the life of the product-application, then other options should be considered. About IAP routines, check these links for P89V51 IAP examples by JW http://www.efton.sk/t0t1/p89v51rd2%20iap.pdf http://www.efton.sk/t0t1/iap.zip http://www.efton.sk/t0t1/index.htm Hint: The P89LV51RD2FN means that you are using the classic DIP-40 package in this application. Since this outline is difficult to follow these days you have to see other alternatives for the board development. |