thanks for Ur post.

in the same page of data sheet there are 3 points

1. Write Data in the Column Latches
Data is written by byte to the column latches as for an external RAM memory. Out of the 11
address bits of the data pointer, the 4 MSBs are used for page selection (row) and 7 are used for
byte selection. Between two EEPROM programming sessions, all the addresses in the column
latches must stay on the same page, meaning that the 4 MSB must not be changed.
The following procedure is used to write to the column latches:
• Set bit EEE of EECON register
• Load DPTR with the address to write
• Store A register with the data to be written
• Execute a MOVX @DPTR, A
• If needed, loop the three last instructions until the end of a 128 bytes page

2Programming
The EEPROM programming consists on the following actions:
• Writing one or more bytes of one page in the column latches. Normally, all bytes must belong
to the same page; if not, the first page address will be latched and the others discarded.
• Launching programming by writing the control sequence (52h followed by A2h) to the
EECON register.
• EEBUSY flag in EECON is then set by hardware to indicate that programming is in progress
and that the EEPROM segment is not available for reading.
• The end of programming is indicated by a hardware clear of the EEBUSY flag.

3Read Data
The following procedure is used to read the data stored in the EEPROM memory:
• Set bit EEE of EECON register
• Stretch the MOVX to accommodate the slow access time of the column latch (Set bit M0 of
AUXR register)
• Load DPTR with the address to read
• Execute a MOVX A, @DPTR

the point #3 is doing well but what about the first one I am not willing to write large no of data only few bytes whenever it is required.
what ie Difference bewin writing and programmings

vanan